Soi Download Ebook PDF Epub Online

Author : Kerry Bernstein
Norman J. Rohrer
Publisher : Springer Science & Business Media
Release : 2007-09-18
Page : 222
Category : Technology & Engineering
ISBN 13 : 0387740996
Description :


This text introduces the student or practicing engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realisations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation.


Author : O. Kononchuk
B.-Y. Nguyen
Publisher : Elsevier
Release : 2014-06-19
Page : 496
Category : Science
ISBN 13 : 0857099256
Description :


Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. Covers SOI transistors and circuits, as well as manufacturing processes and reliability Looks at applications such as memory, power devices, and photonics


Author : J.-P. Colinge
Vladimir S. Lysenko
Publisher : Springer
Release : 2012-10-21
Page : 290
Category : Technology & Engineering
ISBN 13 : 9789401040525
Description :


In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.


Author : James B. Kuo
Shih-Chia Lin
Publisher : John Wiley & Sons
Release : 2004-04-05
Page : 424
Category : Technology & Engineering
ISBN 13 : 0471464171
Description :


A practical, comprehensive survey of SOI CMOS devices and circuitsfor microelectronics engineers The microelectronics industry is becoming increasingly dependent onSOI CMOS VLSI devices and circuits. This book is the first toaddress this important topic with a practical focus on devices andcircuits. It provides an up-to-date survey of the current knowledgeregarding SOI device behaviors and describes state-of-the-artlow-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entirefield, from basic concepts to the most advanced ideas. Topicsinclude: * SOI device behavior: fundamental and floating body effects, hotcarrier effects, sensitivity, reliability, self-heating, breakdown,ESD, dual-gate devices, accumulation-mode devices, short channeleffects, and narrow channel effects * Low-voltage SOI digital circuits: floating body effects, DRAM,SRAM, static logic, dynamic logic, gate array, CPU, frequencydivider, and DSP * Low-voltage SOI analog circuits: op amps, filters, ADC/DAC,sigma-delta modulators, RF circuits, VCO, mixers, low-noiseamplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300important figures on low-voltage SOI CMOS devices and circuits,this volume serves as an authoritative, reliable resource forengineers designing these circuits in high-tech industries.


Author : Harriet Ann Lam
Publisher :
Release : 2003
Page : 188
Category :
ISBN 13 :
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Author : Kerry Bernstein
Norman J. Rohrer
Publisher : Springer Science & Business Media
Release : 2007-05-08
Page : 222
Category : Technology & Engineering
ISBN 13 : 0306470136
Description :


This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.


Author : Stephen Anthony Parke
Publisher :
Release : 1993
Page : 456
Category :
ISBN 13 :
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Author : Francis Balestra
Alexei N. Nazarov
Publisher : Springer Science & Business Media
Release : 2012-12-06
Page : 351
Category : Technology & Engineering
ISBN 13 : 9401003394
Description :


A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.


Author : Koushik K. Das
Publisher :
Release : 2003
Page :
Category :
ISBN 13 :
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Author : Timothy John Brosnihan
Publisher :
Release : 1998
Page : 138
Category : Microelectromechanical systems
ISBN 13 :
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Author : Takayasu Sakurai
Akira Matsuzawa
Publisher : Springer Science & Business Media
Release : 2007-02-01
Page : 411
Category : Technology & Engineering
ISBN 13 : 0387292187
Description :


Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding.


Author : Andrew Marshall
Sreedhar Natarajan
Publisher : Springer Science & Business Media
Release : 2007-05-08
Page : 392
Category : Technology & Engineering
ISBN 13 : 0306481618
Description :


This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.


Author : Rahul M. Rao
Publisher :
Release : 2004
Page :
Category :
ISBN 13 :
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Author : Jayakumaran Sivagnaname
Publisher :
Release : 2005
Page :
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ISBN 13 :
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Author : Erli Chen
Publisher :
Release : 1997
Page : 278
Category :
ISBN 13 :
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Author : Yasuo Arai
Ikuo Kurachi
Publisher : Morgan & Claypool Publishers
Release : 2017-02-15
Page : 71
Category : Technology & Engineering
ISBN 13 : 1627056912
Description :


Silicon-on-Insulator (SOI) technology is widely used in high-performance and low-power semiconductor devices. The SOI wafers have two layers of active silicon (Si), and normally the bottom Si layer is a mere physical structure. The idea of making intelligent pixel detectors by using the bottom Si layer as sensors for X-ray, infrared light, high-energy particles, neutrons, etc. emerged from very early days of the SOI technology. However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently. This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors. It introduces basic issues to implement the SOI detector and presents how to solve these issues. It also reveals fundamental techniques, improvement of radiation tolerance, applications, and examples of the detectors. Since the SOI detector has both a thick sensing region and CMOS transistors in a monolithic die, many ideas have emerged to utilize this technology. This book is a good introduction for people who want to develop or use SOI detectors.


Author : Jean Laconte
Denis Flandre
Publisher : Springer Science & Business Media
Release : 2006-10-11
Page : 292
Category : Technology & Engineering
ISBN 13 : 0387288430
Description :


Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated. The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.


Author : James B. Kuo
Ker-Wei Su
Publisher : Springer Science & Business Media
Release : 2013-04-17
Page : 422
Category : Technology & Engineering
ISBN 13 : 1475728239
Description :


Silicon-On-Insulator (SOI) CMOS technology has been regarded as another major technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide structure, SOI technology offers superior CMOS devices with higher speed, high density, and reduced second order effects for deep-submicron low-voltage, low-power VLSI circuits applications. In addition to VLSI applications, and because of its outstanding properties, SOI technology has been used to realize communication circuits, microwave devices, BICMOS devices, and even fiber optics applications. CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circuits, behaviors of the SOI CMOS devices are presented, followed by a CAD program, ST-SPICE, which incorporates models for deep-submicron fully-depleted mesa-isolated SOI CMOS devices and special purpose SOI devices including polysilicon TFTs. CMOS VLSI Engineering: Silicon-On-Insulator is written for undergraduate senior students and first-year graduate students interested in CMOS VLSI. It will also be suitable for electrical engineering professionals interested in microelectronics.


Author : Yasuhisa Omura
Publisher : John Wiley & Sons
Release : 2013-08-27
Page : 320
Category : Technology & Engineering
ISBN 13 : 1118487931
Description :


Advanced level consolidation of the technology, physicsand design aspects of silicon-on-insulator (SOI)lubistors No comprehensive description of the physics and possibleapplications of the Lubistor can be found in a single source eventhough the Lubistor is already being used in SOI LSIs. The bookprovides, for the first time, a comprehensive understanding of thephysics of the Lubistor. The author argues that a clearunderstanding of the fundamental physics of the pn junction isessential to allowing scientists and engineers to propose newdevices. Since 2001 IBM has been applying the Lubistor tocommercial SOI LSIs (large scale integrated devices) used in PCsand game machines. It is a key device in that it provideselectrostatic protection to the LSIs. The book explains thedevice modeling for such applications, and covers the recent analogcircuit application of the voltage reference circuit. The author also reviews the physics and the modeling of idealand non-ideal pn junctions through reconsideration of theShockley’s theory, offering readers an opportunity to studythe physics of pn junction. Pn-junction devices are alreadyapplied to the optical communication system as the light emitterand the receiver. Alternatively, optical signal modulatorsare proposed for coupling the Si optical waveguide with thepn-junction injector. The book also explores the photoniccrystal physics and device applications of the Lubistor. Advanced level consolidation of the technology, physics anddesign aspects of silicon-on-insulator (SOI) lubistors Written by the inventor of the Lubistor, this volume describesthe technology for readers to understand the physics andapplications of the device First book devoted to the Lubistor transistor, presently beingutilized in electrostatic discharge (ESD) applications in SOItechnology, a growing market for semiconductor devices and advancedtechnologies Approaches the topic in a systematic manner, from physicaltheory, through to modelling, and finally circuit applications This is an advanced level book requiring knowledge of electricaland electronics engineering at graduate level. Contents includes: Concept of Ideal pn Junction/Proposalof Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor(Lubistor)/ Noise Characteristics and Modeling of Lubistor/NegativeConductance Properties in Extremely Thin SOI Lubistors/ Two-Dimensionally Confined Injection Phenomena at LowTemperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Studyof Two-Dimensional Confinement Effects on Reverse-Biased CurrentCharacteristics of Ultra-Thin SOI Lubistors/ Gate-Controlled Bipolar Action in Ultra-thin Dynamic ThresholdSOI MOSFET/Sub-Circuit Models of SOI Lubistors for ElectrostaticDischarge Protection Circuit Design and Their Applications/A NewBasic Element for Neural Logic Functions and Functionality inCircuit Applications/Possible Implementation of SOI Lubistors intoConventional Logic Circuits/Potentiality of Electro-Optic ModulatorBased on SOI Waveguide/Principles of ParameterExtraction/Feasibility of Lubistor-Based Avalanche PhotoTransistor


Author : Maryline Bawedin
Publisher : Presses univ. de Louvain
Release : 2007
Page : 168
Category : Science
ISBN 13 : 9782874630880
Description :


Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM), uses only one transistor in partially-depleted (PD) SOI technology and takes advantage of FBE which have been considered as parasitic phenomena until now. The Z-RAM programming principles are based on the threshold voltage VTH variations induced by the excess or lack of majority carriers in the floating body. In this dissertation, a new floating-body effect, the Transient Floating Body Potential Effect (TFBPE), based on the body majority carriers non-equilibrium and on the dual dynamic gate coupling in standard fully-depleted (FD) SOI MOSFETs is presented for the first time. The TFBPE occurs in a specific gate bias range and can induce strong hysteresis of the gate and drain current characteristics although the FD SOI transistors are usually known to be immune against the FBE and their aftermaths. Adapted from the same physics principles as in the drain current hysteresis, that we called the Meta-Stable Dip (MSD) effect, a new concept of one-transistor capacitor-less memory was also proposed, the Meta-Stable DRAM (MSDRAM) which is dedicated for double-gate operations. All the experimental results and physics interpretations were supported by 2D numerical simulations. A 1D semi-analytical model of the body potential for non-equilibrium states was also proposed. For the first time, this original body-potential model takes into account the majority carriers density variations, i.e., the quasi-Fermi level non-equilibrium versus a transient gate voltage scan in a FD MOS device.